Nucleation and growth of H blisters in stacking fault on B2–FeAl {100} planes
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چکیده
منابع مشابه
Stacking-fault nucleation on Ir(111).
Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of ada...
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A surface stacking fault energy approach to predicting defect nucleation in surface-dominated nanostructures
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2017
ISSN: 2046-2069
DOI: 10.1039/c7ra08368h